Infineon Technologies has actually created the world’s initial 300 mm gallium nitride (GaN) wafer innovation, marking a substantial milestone in the power semiconductor market. By leveraging its existing 300 mm silicon manufacturing infrastructure, Infineon has developed a scalable, high-volume manufacturing procedure that enhances cost-efficiency.
The 300 mm GaN wafers use 2 3 times more chips per wafer contrasted to 200 mm wafers, boosting production effectiveness and gadget performance. This development placements Infineon as a leader in the quickly expanding GaN market, which is predicted to reach several billion dollars by the end of the years.
Infineon CEO Jochen Hanebeck showcases among the initial 300 mm GaN power wafers, generated in a scalable high-volume production setting. (Picture: Infineon)
GaN-based power semiconductors are getting grip throughout different sectors, consisting of commercial, automotive, consumer electronic devices, AI power supplies, solar inverters, and motor-control systems. GaN technology offers considerable advantages, such as raised power efficiency, lowered dimension and weight, and reduced overall expenses for end individuals. The new 300 mm GaN wafers make sure better supply security and scalability, making them suitable for expanding market needs.
Infineon’s combination of 300 mm GaN wafers right into its existing silicon production lines in Villach, Austria, demonstrates the company’s proficiency in both GaN and silicon-based semiconductors. This breakthrough likewise paves the way for expense parity between GaN and silicon, especially in terms of equivalent R DS(on) degrees. Infineon intends to showcase the first 300 mm GaN wafers at the electronica trade show in November 2024 in Munich.
A technical engineer in Infineon Technologies’ cleanroom in Villach, Austria, holds a 300 mm gallium nitride wafer. (Image: Infineon)
This advancement enhances Infineon’s leadership in power systems and its dedication to development, especially in the fields of decarbonization and digitalization. The company’s critical focus on GaN, along with silicon and silicon carbide, highlights its placement at the leading edge of semiconductor technology.
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